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Open Access Article

Physical Sience and Technical Research. 2021; 1: (1) ; 1-15 ; DOI: 10.12208/j.pstr.20210003.

Recent research progress of negative capacitance field effect transistor
负电容场效应晶体管最新研究进展

作者: 李恒辉, 张冲, 于子苇, 郭全胜, 刘丽霞, 贾婷婷*, 于淑会

东南大学 江苏南京

中国科学院深圳先进技术研究院 广东深圳

湖北大学 湖北武汉

*通讯作者: 贾婷婷,单位:中国科学院深圳先进技术研究院 广东深圳;

发布时间: 2021-12-20 总浏览量: 304

摘要

万物互联、人工智能等新兴技术对运算和存储提出了更高的要求,然而传统金属氧化物半导体场效应晶体管(MOSFET)由于玻尔兹曼限制其亚阈值摆幅(SS)无法降至60 mV/dec以下。因此其性能即将到达瓶颈而摩尔定律也面临着失效的风险。负电容场效应晶体管(NCFET)可以突破玻尔兹曼限制并将SS降低到 60 mV/dec 以下,从而极大地改善了晶体管的开关电流比,有效解决了晶体管低功耗和高性能之间的矛盾。为晶体管特征尺寸的缩减和摩尔定律继续前进提供了选择。基于FeFET的非易失性存储器也为雪崩式增长的存储需求提供了解决方案。本文分析总结了近两年以来关于NCFET的代表性研究进展,为进一步研究提供参考。本文首先介绍了当前MOSFET发展所面临的问题以及解决办法;接着分析总结了铁电材料的基本性质和分类,并阐述了铁电材料负电容的物理机制和NCFET工作原理; 然后对近年来NCFET结构,沟道材料,铁电材料,存储器和电路设计这五个研究方向的代表性研究进展进行简要介绍;最后作出总结与展望。

关键词: NCFET;铁电存储器;铁电材料;负电容

Abstract

The Internet of thing, artificial intelligence and other emerging technologies put forward higher requirements for computing and storage. However, subthreshold amplitude (SS) of traditional metal oxide semiconductor field effect transistor (MOSFET) cannot be reduced to sub 60 mV/ dec, which is termed as Boltzmann’s tyranny. Thus, its performance is about to reach a bottleneck and Moore's Law is at risk of failure. The negative capacitance field effect transistor (NCFET) can break down the Boltzmann’s tyranny and reduce SS to sub 60 mV/ dec, which greatly improves the ratio of On-current to Off current (Ion/Ioff) and effectively solves the contradiction between low power consumption and high performance of transistors. Non-volatile memory based on FeFET also provides splendid solution to the explosive increase of storage requirements. Thus, NCFET is one of the most competitive candidates to reduce the feature size of transistor and help Moore's law to continue its way. In this paper, the representative research progresses on NCFET in recent two years are analyzed and summarized, which provides reference for further research. This paper first introduces the problems of current MOSFET development and several potential solutions to them; Secondly, the basic properties and classification of ferroelectric materials are summarized and introduced. Thirdly, the physical mechanism of negative capacitance of ferroelectric materials and the principle of NCFET are described. Then, the representative research progresses in NCFET structure, channel materials, ferroelectric materials, memory and circuit design in recent years are briefly introduced, respectively. Finally, a summary and outlook are made.

Key words: NCFET; FeFET; Ferroelectric materials; Negative capacitance

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引用本文

李恒辉, 张冲, 于子苇, 郭全胜, 刘丽霞, 贾婷婷, 于淑会 负电容场效应晶体管最新研究进展[J]. 物理科学与技术研究, 2021; 1: (1) : 1-15.